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- PhD Position in Advanced Nitride-Based HEMTs for RF and Power Electronics
PhD Position in Advanced Nitride-Based HEMTs for RF and Power Electronics
LUNDS UNIVERSITETSkåne län, Lund
Previous experience is desired
49 days left
to apply for the job
Lund University was founded in 1666 and is consistently ranked among the world's leading universities. We have approximately 46,000 students and 8,500 staff members in Lund, Helsingborg, and Malmö. We are united in our strive to understand, explain, and improve our world and people's living conditions.
Description of the Unit
The position is located at the Division of Electromagnetism and Nanoelectronics within the Department of Electrical and Information Technology. The division comprises 15 senior researchers and approximately 20 PhD students, with extensive collaboration with industry. Within the division, we work across a broad field ranging from semiconductor components, nanotechnology, electronics, and electromagnetic calculations. We offer an open working environment with opportunities for professional development and a good balance between work and leisure. There are excellent opportunities for collaboration between researchers and PhD students, as well as with industry.
Being a PhD Student
As a PhD student, you are both admitted as a student and employed by Lund University.
As a doctoral student, you are trained in a scientific approach. This can be briefly described as gaining practice in critical and analytical thinking, solving problems independently using appropriate methods, and developing research ethics awareness. Additionally, as a PhD student, you have the opportunity to work on projects, develop leadership skills, and enhance your pedagogical abilities. Throughout your studies, you are guided by supervisors. The doctoral studies conclude with a thesis and a doctoral degree.
Read more about being a PhD student at LTH on lth.se.
Subject and Project Description
The subject of this project is to build and study advanced transistors based on semiconductor materials with very large bandgaps within the III-N material system. The focus is on the development of AlGaN and AlScN-based HEMTs for both RF and power electronics applications.
You will work with component design and fabrication in cleanroom environments, as well as electrical characterization and some component modeling.
The research will be carried out in close collaboration with other PhD students working on nitride components at the division, as well as with experienced researchers in material growth and material characterization at the Department of Solid State Physics and the Synchrotron Light Facility. The research is linked to several major projects: KAW, the C3NIT Component Center, and the Chips-JU WBG Pilot Line.
For more information about the projects, see:
https://kaw.wallenberg.org/ (https://kaw.wallenberg.org/)
https://c3nit.se/ (https://c3nit.se/)
https://www.wbg-pilot-line.eu/ (https://www.wbg-pilot-line.eu/)
Responsibilities
You will primarily focus on your doctoral education, which includes participation in research projects, doctoral courses, seminars, and conferences.
Your research will focus on the fabrication and characterization of nitride-based HEMTs for RF and power electronics. Special emphasis will be placed on the integration of advanced materials with ultra-wide bandgaps, such as AlN and AlScN, to increase component performance.
You will collaborate with other researchers and PhD students, both in the fabrication and characterization of components, as well as with materials scientists and epitaxy specialists. You will also write scientific articles and present them at international scientific conferences. In addition, you will take PhD courses to deepen your knowledge in semiconductor physics, electronics, and quantum physics.
The responsibilities also include participation in teaching and other departmental work, limited to a maximum of 20% of working time.
For the full advertisement, please see https://lu.varbi.com/what:job/jobID:937572/ (https://lu.varbi.com/what:job/jobID:937572/).
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